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Particle Wafer Standards for Calibration of KLA-Tencor SP2
Contamination Wafer Standards
PSL Wafer Standards for Hitachi LS
Particle Calibration Standards calibrate KLA-Tencor SP1
PSL Calibration Standards calibrate KLA-Tencor SP3
Silica Wafer Contamination Standards calibrate KLA-Tencor Surfscan tools

Particle Wafer Standards and Silica Contamination Wafer Standards

Particle Wafer Standard, Contamination Wafer Standard

Applied Physics USA offers Particle Wafer Standards, Contamination Wafer Standards and PSL Wafer Standards on 100mm, 125mm, 150mm, 200mm 300mm wafers as full depositions and Spot or Circle Depositions. The Particle Wafer Standards are deposited with PSL spheres, polystyrene latex spheres, from 40nm (nanometers) to 10um (microns). Most PSL calibration wafers are deposited with PSL spheres in the size range of 80nm to 3um, but there are some requirements down to 40nm and in some cases, companies require up to 30 micron wafer size standards. The following is a brief discussion on the use, deposition and applications of Particle Wafer Standards, Contamination Wafer Standards  and Silicon Dioxide Standards. Call Applied Physics, Inc at 720-635-3931 for 100mm, 125mm, 150mm, 200mm and 300mm PSL Wafer standards on prime silicon wafers, Full depositions, spot depositions or half depositions, which include a post wafer scan and PSL Size certificate on standards between 80nm and 3um in deposition size.

The purpose of Contamination Wafer Standards  are to calibrate the size response of wafer inspection tools, from 20nm to 3+ microns. The term used for these tools were wafer inspection systems, but is now referred to as SSIS, Surface Scan Inspection Tools. A silicon wafer is the typical deposited substrate, but photo masks and glass substrates can also be deposited for size standards. Using the silicon wafer as the reference, the wafer is placed in a typical Particle Deposition System, such as the MSP NPT-2 Particle Deposition System. The 2300 NPT-2 is capable of depositing PSL Spheres and process particles such as silicon dioxide particles, down to 20nm and up to 3+ microns on the wafer surface using a Differential Mobility Analyzer, DMA, combined with Nano Particle Technology. PSL spheres and process particles are directed through the DMA, which uses airflow and electrical charging to pass only a very narrow size peak through the DMA, creating a highly accurate PSL or Particle size peak. The size peak is a single refractive index particle peak, which is deposited on a silicon wafer, photo mask or glass substrate. The size peak is passed through an ionizing stream to neutralize particle charges for the purpose of improving particle counts and creating single charged particles, thus providing a more narrow size peak. The particle stream is counted and directed down to a substrate surface as a full deposition or a spot deposition, also referred to as a circle deposition. Full depositions are traditionally used to calibrate one size point of an SSIS tool, thus as many as 6 full deposition wafers would be used to calibrate the size range of a KLA-Tencor SP1, SP2, SP3, SPX, Hitachi LS and other wafer inspection tools. The full deposition wafer provides two functions, size accuracy calibration, as well as wafer scan uniformity. Spot deposition wafers can also be generated, which can be one or more round size peaks, or spots on the wafer surface. Thus when an SSIS tool scans a Spot Deposition Wafer, the SSIS detects multiple size peaks in one scan, and the calibration of the SSIS tool can progress more quickly. In addition, Spot Depositions will quickly show if the SSIS tool has any weaknesses in size accuracy response across a broad size range in one scan. So a full deposition, Particle Wafer Standard, has advantages of showing how uniform a wafer inspection tool is during a wafer scan, while a spot deposition wafer can describe any weaknesses of the size response accuracy across a wide size range in one wafer scan of the Contamination Wafer Standard. The more narrow the size peak is, the more accurate the calibration of the SSIS tool. Thus, size accuracy, count accuracy and type of deposition (full deposition or spot deposition) is critical a quality PSL Contamination Standard. The cost of 6 full deposition, Silicon Dioxide Calibration Wafers, costs about the same as one wafer with 6 sizes of spot depositions on a single wafer. Depositing on silicon wafers, photo masks, and glass substrates are typical requirements. Depositing PSL Spheres are the traditional material used as a Contamination Wafer Standard, but more recently, Silicon Oxide particles are becoming more in demand because the refractive index is similar to PSL spheres, thus calibration response is similar to polystyrene latex spheres. More importantly, Silicon Dioxide, SiO2 particles are non-uniform in shape, thus more representative of real contamination particles on the wafer surface. PSL Spheres, literally evaporate when a high powered laser beam strikes the sphere; while, SiO2 particles are able to withstand the high laser energy of the more recent SSIS tools, such as KLA-Tencor SPX and KLA-Tencor SP3 inspection tools. Get pricing on all PSL Wafer Standards by requesting a Particle Wafer Standard quote for your needs.

Particle Calibration Standards and Contamination Wafer Standards

Particle Wafer Standard for Calibration of KLA-Tencor SP1

Contamination Wafer Standard

PSL Wafer Calibration Standard

Particle Wafer Standard to calibrate KLA-Tencor Surfscan tools

Particle Calibration Standards calibrate KLA-Tencor SPX

Silicon Dioxide Standards calibrate KLA-Tencor SP3

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Foggers, PSL Spheres